
Hauman HP1000 and HFP1000 platforms combine automated wafer probing with parallel electrical and optical measurement for LED and Mini LED applications. Multi-die architectures support efficient characterization while increasing test throughput and production efficiency.
Up to 64-die parallel measurement, depending on platform and configuration
Electrical characterization including VF, IR, VZ and VFD
Optical characterization including wavelength, peak intensity, FWHM and chromaticity
Hauman HVP1000 and HP1000-LIV/PIV platforms provide integrated electrical and optical characterization for VCSEL devices. Depending on the configuration, the systems support LIV/PIV, Near-Field and Far-Field measurement for R&D validation as well as production-oriented test applications.
Key capabilities
Near-Field analysis including intensity, uniformity, beam waist,
M² and emitter evaluation
Far-Field analysis including beam centroid, beam width, beam profile, divergence angle and Gaussian fit
Support for LIV/PIV measurement, 4"/6" wafers, multi-die testing and temperature testing up to 85 °C, depending on configuration
LIV/PIV, Near-Field and Far-Field functions can also be integrated into a combined system where maximum measurement flexibility is required, with the expected trade-off of lower overall throughput compared with dedicated high-throughput configurations.
Modern Micro LED wafers and carriers can contain millions of individual emitters, making representative sampling increasingly difficult. The HPL1000 is designed for automated, non-contact micro-photoluminescence measurement at die level, enabling direct optical characterization across the wafer rather than relying only on measurements from selected sites.
By generating individual measurement data for each inspected Micro LED die, the system supports earlier defect detection, wavelength and intensity binning, process monitoring and traceability. µPL results can also be correlated with later electroluminescence measurements, helping manufacturers move part of the quality decision process to an earlier, non-contact test stage.
Key capabilities
Full-wafer, non-contact µPL measurement with per-die identification and individual measurement records
Optical characterization including wavelength, intensity, FWHM/chromaticity and bright, dark or dead emission-defect inspection
Support for process monitoring, die-level binning, traceability and correlation with later EL measurement data
Suitable for Micro LED EPI wafer, COW and CoC applications. Current configurations support 4" and 6" wafers, with 8" to 12" support planned for 2027.